CPC3981ZTR
ActiveN-CH DEP MOSFET 800V 45 OH SOT-223-2L TR/ TR
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CPC3981ZTR
ActiveN-CH DEP MOSFET 800V 45 OH SOT-223-2L TR/ TR
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Technical Specifications
Parameters and characteristics for this part
| Specification | CPC3981ZTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 mA |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 105 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261-3 |
| Power Dissipation (Max) | 2.25 W |
| Rds On (Max) @ Id, Vgs | 45 Ohm |
| Supplier Device Package | SOT-223-2L |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 3.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CPC3981 Series
Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications.
Documents
Technical documentation and resources