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STMICROELECTRONICS STD10LN80K5
Discrete Semiconductor Products

STD96N3LLH6

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 80 A, 4.2 MILLIOHMS, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

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STMICROELECTRONICS STD10LN80K5
Discrete Semiconductor Products

STD96N3LLH6

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 80 A, 4.2 MILLIOHMS, TO-252 (DPAK), 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD96N3LLH6
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]5.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2200 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]70 W
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.27
10$ 1.04
100$ 0.81
500$ 0.69
1000$ 0.56
Digi-Reel® 1$ 1.27
10$ 1.04
100$ 0.81
500$ 0.69
1000$ 0.56
N/A 2487$ 1.57
Tape & Reel (TR) 2500$ 0.53

Description

General part information

STD96 Series

This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.RDS(on)* Qgindustry benchmarkExtremely low on-resistance RDS(on)High avalanche ruggednessLow gate drive power losses