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Technical Specifications
Parameters and characteristics for this part
| Specification | L6399DTR |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 430 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.9 V, 1.1 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) | 75 ns |
| Rise / Fall Time (Typ) | 35 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6399 Series
The L6399 is a high voltage device manufactured using BCD™ "offline" technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.
The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.
Documents
Technical documentation and resources
