Discrete Semiconductor Products
STP40NF10
ActiveSTMicroelectronics
N-CHANNEL 100V - 0.024OHM - 50A - TO-220 LOW GATE CHARGE STRIPFET II MOSFET
Discrete Semiconductor Products
STP40NF10
ActiveSTMicroelectronics
N-CHANNEL 100V - 0.024OHM - 50A - TO-220 LOW GATE CHARGE STRIPFET II MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP40NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2180 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 503 | $ 2.14 | |
Description
General part information
STP40NF10 Series
This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
Documents
Technical documentation and resources