Specification	GT40QR21(STA1,E,D

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	230 W
Reverse Recovery Time (trr)	600 ns
Supplier Device Package	TO-3P(N)
Switching Energy	290 µJ
Switching Energy	-
Test Condition	280 V, 10 Ohm, 20 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

GT40QR21 Series

IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)

Part	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Switching Energy	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Package / Case	Vce(on) (Max) @ Vge, Ic	Test Condition	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Supplier Device Package
Toshiba Semiconductor and Storage GT40QR21(STA1,E,D	Through Hole	230 W	1200 V	290 µJ	-	40 A	175 °C	SC-65-3 TO-3P-3	2.7 V	10 Ohm 20 V 40 A 280 V	600 ns	80 A	TO-3P(N)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)

Technical documentation and resources