GT40QR21 Series
IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)
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IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 1200 V/40 A IGBT, Built-in Diodes, TO-3P(N)
| Part | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Switching Energy | Switching Energy | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Package / Case | Vce(on) (Max) @ Vge, Ic | Test Condition | Reverse Recovery Time (trr) | Current - Collector Pulsed (Icm) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Through Hole | 230 W | 1200 V | 290 µJ | - | 40 A | 175 °C | SC-65-3 TO-3P-3 | 2.7 V | 10 Ohm 20 V 40 A 280 V | 600 ns | 80 A | TO-3P(N) |