Zenode.ai Logo
Beta
6-DFN2020MD_View 2
Discrete Semiconductor Products

BUK7D36-60EX

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 60 V, 14 A, 0.028 OHM, DFN2020MD, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

6-DFN2020MD_View 2
Discrete Semiconductor Products

BUK7D36-60EX

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 60 V, 14 A, 0.028 OHM, DFN2020MD, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7D36-60EX
Current - Continuous Drain (Id) @ 25°C5.5 A, 14 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds453 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)15 W, 2.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs36 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.34
100$ 0.23
500$ 0.18
1000$ 0.15
Digi-Reel® 1$ 0.39
10$ 0.34
100$ 0.23
500$ 0.18
1000$ 0.15
Tape & Reel (TR) 3000$ 0.13
6000$ 0.13
9000$ 0.12
30000$ 0.11

Description

General part information

BUK7D36-60E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.