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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Grade | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Qualification | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | Automotive | 453 pF | MOSFET (Metal Oxide) | 5.5 A 14 A | AEC-Q101 | N-Channel | -55 °C | 175 ░C | 14 nC | Surface Mount | 6-UDFN Exposed Pad | 20 V | 10 V | 60 V | 4 V | DFN2020MD-6 | 2.3 W 15 W | 36 mOhm |