Discrete Semiconductor Products

SI8465DB-T2-E1

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MOSFET P-CH 20V 4MICROFOOT

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Discrete Semiconductor Products

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MOSFET P-CH 20V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8465DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max)	1.8 W, 780 mW
Rds On (Max) @ Id, Vgs	104 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI8465DB-T2-E1	1.5 V	2.5 V 4.5 V	12 V	1.8 W 780 mW	-55 °C	150 °C	P-Channel	4-Microfoot	450 pF	2.5 A	MOSFET (Metal Oxide)	Surface Mount	104 mOhm	4-XFBGA CSPBGA	18 nC	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available