SI8465 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4MICROFOOT
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.5 V | 2.5 V 4.5 V | 12 V | 1.8 W 780 mW | -55 °C | 150 °C | P-Channel | 4-Microfoot | 450 pF | 2.5 A | MOSFET (Metal Oxide) | Surface Mount | 104 mOhm | 4-XFBGA CSPBGA | 18 nC | 20 V |