Discrete Semiconductor Products

KSP45BU

Obsolete

TRANS NPN 350V 0.3A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 350V 0.3A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSP45BU

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	Mounting Type	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSP45BU	TO-92-3	Through Hole	NPN	TO-226-3 TO-92-3	350 V	300 mA	750 mV	150 °C	625 mW	500 nA	50 hFE
ON Semiconductor KSP45TA	TO-92-3	Through Hole	NPN	TO-226-3 TO-92-3	350 V	300 mA	750 mV	150 °C	625 mW	500 nA	50 hFE
ON Semiconductor KSP45BU	TO-92-3	Through Hole	NPN	TO-226-3 TO-92-3	350 V	300 mA	750 mV	150 °C	625 mW	500 nA	50 hFE
ON Semiconductor KSP45TF	TO-92-3	Through Hole	NPN	TO-226-3 TO-92-3	350 V	300 mA	750 mV	150 °C	625 mW	500 nA	50 hFE
ON Semiconductor KSP45TF	TO-92-3	Through Hole	NPN	TO-226-3 TO-92-3	350 V	300 mA	750 mV	150 °C	625 mW	500 nA	50 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources