Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCBO= KSP44: 400V
• Collector-Emitter Voltage : VCBO=KSP45: 350V
• High-Voltage Transistor
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Supplier Device Package | Mounting Type | Transistor Type | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | TO-92-3 | Through Hole | NPN | TO-226-3 TO-92-3 | 350 V | 300 mA | 750 mV | 150 °C | 625 mW | 500 nA | 50 hFE |
ON Semiconductor | TO-92-3 | Through Hole | NPN | TO-226-3 TO-92-3 | 350 V | 300 mA | 750 mV | 150 °C | 625 mW | 500 nA | 50 hFE |
ON Semiconductor | TO-92-3 | Through Hole | NPN | TO-226-3 TO-92-3 | 350 V | 300 mA | 750 mV | 150 °C | 625 mW | 500 nA | 50 hFE |
ON Semiconductor | TO-92-3 | Through Hole | NPN | TO-226-3 TO-92-3 | 350 V | 300 mA | 750 mV | 150 °C | 625 mW | 500 nA | 50 hFE |
ON Semiconductor | TO-92-3 | Through Hole | NPN | TO-226-3 TO-92-3 | 350 V | 300 mA | 750 mV | 150 °C | 625 mW | 500 nA | 50 hFE |