Discrete Semiconductor Products

STU16N60M2

Obsolete

MOSFET N-CH 600V 12A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 12A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU16N60M2

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STU16N60M2	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	12 A	25 V	150 °C	110 W	700 pF	600 V	N-Channel	4 V	320 mOhm	19 nC	Through Hole	MOSFET (Metal Oxide)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.61

General part information

N-Channel 600 V 12A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available