Specification	STTH2R06U

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	SMB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

STTH2R06 Series

600 V, 2 A, Turbo 2 Ultrafast Diode

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)
STMicroelectronics STTH2R06A	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	SMA	2 µA	50 ns	1.7 V	DO-214AC SMA	600 V	Standard	2 A
STMicroelectronics STTH2R06U	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	SMB	2 µA	50 ns	1.7 V	DO-214AA SMB	600 V	Standard	2 A
STMicroelectronics STTH2R06	-40 °C	175 ░C	200 mA 500 ns	Through Hole	DO-41	2 µA	50 ns	1.7 V	Axial DO-204AL DO-41	600 V	Standard	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits.

Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.

Technical documentation and resources