Discrete Semiconductor Products

RZE002P02TL

NRND

MOSFETS 1.2V DRVE PCH MOSFET

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Discrete Semiconductor Products

NRND

MOSFETS 1.2V DRVE PCH MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RZE002P02TL

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	115 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	EMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Operating Temperature	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RZE002P02TL	EMT3	150 °C	SC-75 SOT-416	10 V	1.2 V	4.5 V	115 pF	200 mA	150 mW	P-Channel	1 V	MOSFET (Metal Oxide)	1.4 nC	20 V	Surface Mount	1.2 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

Technical documentation and resources