Specification	MBRAF360T3G

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	3 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SMA Flat Leads, DO-221AC
Speed	200 mA, 500 ns
Supplier Device Package	SMA-FL
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	630 mV

MBRAF360 Series

3 A, 60 V Schottky Rectifier

Part	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case
ON Semiconductor MBRAF360T3G	200 mA 500 ns	SMA-FL	630 mV	Schottky	60 V	Surface Mount	3 mA	150 °C	-65 C	4 A	DO-221AC SMA Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRAF360 Series

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.