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MBRAF360 Series

3 A, 60 V Schottky Rectifier

Manufacturer: ON Semiconductor

Catalog

3 A, 60 V Schottky Rectifier

Key Features

Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
Guard-Ring for Stress Protection
These are Pb-Free and Halide-Free DevicesMechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = CHuman Body Model = 3B

Description

AI
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.