Specification	SISH407DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A, 15.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	93.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.6 W, 33 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

SISH407 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SISH407DN-T1-GE3	93.8 nC	20 V	8 V	PowerPAK® 1212-8SH	Surface Mount	15.4 A 25 A	-55 °C	150 °C	PowerPAK® 1212-8SH	P-Channel	1 V	2760 pF	9.5 mOhm	3.6 W 33 W	MOSFET (Metal Oxide)	1.8 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 15.4A (Ta), 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources