SISH407 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET, P-CH, -20V, -25A, 150DEG C, 33W
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 93.8 nC | 20 V | 8 V | PowerPAK® 1212-8SH | Surface Mount | 15.4 A 25 A | -55 °C | 150 °C | PowerPAK® 1212-8SH | P-Channel | 1 V | 2760 pF | 9.5 mOhm | 3.6 W 33 W | MOSFET (Metal Oxide) | 1.8 V 4.5 V |