LMG1205YFXR
Active1.2-A, 5-A 90-V, HALF BRIDGE GATE DRIVER WITH 5-V UVLO FOR GANFET AND MOSFET
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LMG1205YFXR
Active1.2-A, 5-A 90-V, HALF BRIDGE GATE DRIVER WITH 5-V UVLO FOR GANFET AND MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | LMG1205YFXR |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 1.2 A |
| Current - Peak Output (Source, Sink) [custom] | 5 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 100 V |
| Input Type | TTL |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | DSBGA, 12-WFBGA |
| Rise / Fall Time (Typ) [custom] | 7 ns |
| Rise / Fall Time (Typ) [custom] | 3.5 ns |
| Supplier Device Package | 12-DSBGA |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.51 | |
| 10 | $ 3.15 | |||
| 25 | $ 2.98 | |||
| 100 | $ 2.58 | |||
| 250 | $ 2.45 | |||
| 500 | $ 2.20 | |||
| 1000 | $ 1.85 | |||
| Digi-Reel® | 1 | $ 3.51 | ||
| 10 | $ 3.15 | |||
| 25 | $ 2.98 | |||
| 100 | $ 2.58 | |||
| 250 | $ 2.45 | |||
| 500 | $ 2.20 | |||
| 1000 | $ 1.85 | |||
| Tape & Reel (TR) | 3000 | $ 1.76 | ||
| Texas Instruments | LARGE T&R | 1 | $ 2.22 | |
| 100 | $ 1.95 | |||
| 250 | $ 1.36 | |||
| 1000 | $ 1.10 | |||
Description
General part information
LMG1205 Series
The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
Documents
Technical documentation and resources
