LMG1205 Series

1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET

Catalog

1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET

Part	Function	Utilized IC / Part	Type	Supplied Contents	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Gate Type	Package / Case	Number of Drivers	Supplier Device Package	Channel Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Mounting Type	Logic Voltage - VIL, VIH
Texas Instruments LMG1205HBEVM	Gate Driver	LMG1205	Power Management	Board(s)
Texas Instruments LMG1205YFXR					100 V	1.2 A	5 A	7 ns	3.5 ns	Half-Bridge	N-Channel MOSFET	12-WFBGA DSBGA	2	12-DSBGA	Independent	4.5 V	5.5 V	-40 °C	125 ¯C	TTL	Surface Mount
Texas Instruments LMG1205YFXT					100 V	1.2 A	5 A	7 ns	3.5 ns	Half-Bridge	N-Channel MOSFET	12-WFBGA DSBGA	2	12-DSBGA	Independent	4.5 V	5.5 V	-40 °C	125 ¯C	TTL	Surface Mount	1.76 V 1.89 V

Catalog

1.2-A, 5-A 90-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET

Key Features

• Independent high-side and low-side TTL logic inputs1.2-A peak source, 5-A sink currentHigh-side floating bias voltage rail operates up to 100 VDCInternal bootstrap supply voltage clampingSplit outputs for adjustable turnon, turnoff strength0.6-Ω pulldown, 2.1-Ω pullup resistanceFast propagation times (35 ns typical)Excellent propagation delay matching (1.5 ns typical)Supply rail undervoltage lockoutLow power consumptionIndependent high-side and low-side TTL logic inputs1.2-A peak source, 5-A sink currentHigh-side floating bias voltage rail operates up to 100 VDCInternal bootstrap supply voltage clampingSplit outputs for adjustable turnon, turnoff strength0.6-Ω pulldown, 2.1-Ω pullup resistanceFast propagation times (35 ns typical)Excellent propagation delay matching (1.5 ns typical)Supply rail undervoltage lockoutLow power consumption

Description

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance. The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.