

Technical Specifications
Parameters and characteristics for this part
| Specification | MSA1162GT1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 hFE |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | SC-59 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 11539 | $ 0.03 | |
Description
General part information
MSA1162 Series
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.
Documents
Technical documentation and resources