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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MSA1162GT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 50 V, 100 MA, 200 MW, SC-59, SURFACE MOUNT

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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MSA1162GT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 50 V, 100 MA, 200 MW, SC-59, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationMSA1162GT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 hFE
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]200 mW
Supplier Device PackageSC-59
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic [Max]500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.02
10$ 0.01
100$ 0.01
DigikeyCut Tape (CT) 1$ 0.14
10$ 0.09
100$ 0.05
500$ 0.04
1000$ 0.03
Digi-Reel® 1$ 0.14
10$ 0.09
100$ 0.05
500$ 0.04
1000$ 0.03
Tape & Reel (TR) 3000$ 0.02
6000$ 0.02
9000$ 0.02
15000$ 0.02
21000$ 0.01
30000$ 0.01
75000$ 0.01
NewarkEach (Supplied on Full Reel) 6000$ 0.02
18000$ 0.02
30000$ 0.02
ON SemiconductorN/A 1$ 0.01

Description

General part information

MSA1162 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.