Discrete Semiconductor Products

VS-GB100TH120N

Obsolete

IGBT MOD 1200V 200A INT-A-PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 200A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB100TH120N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	8.58 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Double INT-A-PAK (3 + 4)
Power - Max [Max]	833 W
Supplier Device Package	Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Input	Configuration	Input Capacitance (Cies) @ Vce	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division VS-GB100NH120N	2.35 V	833 W	150 °C	200 A	Chassis Mount	Double INT-A-PAK	Double INT-A-PAK (3 + 4)	1200 V	5 mA	Standard	Single	8.58 nF
Vishay General Semiconductor - Diodes Division VS-GB100TH120N	2.35 V	833 W	150 °C	200 A	Chassis Mount	Double INT-A-PAK	Double INT-A-PAK (3 + 4)	1200 V	5 mA	Standard	Half Bridge	8.58 nF
Vishay General Semiconductor - Diodes Division VS-GB100LH120N	1.77 V	833 W		200 A	Chassis Mount	Double INT-A-PAK	Double INT-A-PAK (3 + 4)	1200 V	1 mA	Standard	Single	8.96 nF	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 200 A 833 W Chassis Mount Double INT-A-PAK

Technical documentation and resources

No documents available