GB100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
| Part | Vce(on) (Max) @ Vge, Ic | Power - Max [Max] | Operating Temperature | Current - Collector (Ic) (Max) [Max] | Mounting Type | Supplier Device Package | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Input | Configuration | NTC Thermistor | Input Capacitance (Cies) @ Vce | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.35 V | 833 W | 150 °C | 200 A | Chassis Mount | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 1200 V | 5 mA | Standard | Single | 8.58 nF | |||
Vishay General Semiconductor - Diodes Division | 2.35 V | 833 W | 150 °C | 200 A | Chassis Mount | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 1200 V | 5 mA | Standard | Half Bridge | 8.58 nF | |||
Vishay General Semiconductor - Diodes Division | 1.77 V | 833 W | 200 A | Chassis Mount | Double INT-A-PAK | Double INT-A-PAK (3 + 4) | 1200 V | 1 mA | Standard | Single | 8.96 nF | 150 °C | -40 °C |