Discrete Semiconductor Products

STGP19NC60SD

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20 A, 600 V FAST IGBT WITH ULTRAFAST DIODE

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Discrete Semiconductor Products

Active

20 A, 600 V FAST IGBT WITH ULTRAFAST DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	STGP19NC60SD

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	54.5 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	130 W
Reverse Recovery Time (trr)	31 ns
Supplier Device Package	TO-220
Switching Energy	135 µJ, 815 µJ
Td (on/off) @ 25°C	17.5 ns, 175 ns
Test Condition	480 V, 10 Ohm, 15 V, 12 A
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

20 A, 600 V fast IGBT with Ultrafast diode

Part	Switching Energy	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
STMicroelectronics STGP19NC60H	85 µJ 189 µJ	130 W	TO-220-3	-55 °C	150 °C	25 ns 97 ns	TO-220	600 V	10 Ohm 12 A 15 V 390 V	60 A	Through Hole	40 A	2.5 V	53 nC
STMicroelectronics STGP19NC60SD	135 µJ 815 µJ	130 W	TO-220-3	-55 °C	150 °C		TO-220	600 V	10 Ohm 12 A 15 V 480 V	80 A	Through Hole	40 A	1.9 V	54.5 nC	31 ns	17.5 ns 175 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.