Discrete Semiconductor Products
STGP19NC60SD
ActiveSTMicroelectronics
20 A, 600 V FAST IGBT WITH ULTRAFAST DIODE
Discrete Semiconductor Products
STGP19NC60SD
ActiveSTMicroelectronics
20 A, 600 V FAST IGBT WITH ULTRAFAST DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP19NC60SD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 54.5 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 130 W |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 815 µJ, 135 µJ |
| Td (on/off) @ 25°C | 175 ns, 17.5 ns |
| Test Condition | 15 V, 12 A, 10 Ohm, 480 V |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 805 | $ 3.09 | |
| Tube | 1 | $ 2.46 | ||
| 50 | $ 1.98 | |||
| 100 | $ 1.63 | |||
| 500 | $ 1.38 | |||
| 1000 | $ 1.17 | |||
| 2000 | $ 1.11 | |||
| 5000 | $ 1.07 | |||
Description
General part information
STGP19 Series
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.