Discrete Semiconductor Products

BC548BRL1G

Obsolete

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 300 MHZ, 1.5 W, 100 MA, 200

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DocumentsDatasheet Technical Data Sheet EN +2

Discrete Semiconductor Products

BC548BRL1G

Obsolete

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 300 MHZ, 1.5 W, 100 MA, 200

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC548BRL1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

BC548B Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor BC548ABU	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	110	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548BTAR	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	200	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CZL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	250 mV	NPN	420	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548BTFR	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	200	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CTA	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	420	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548_D81Z	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	110	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CTA	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	420	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548BZL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	600 mV	NPN	200	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548C	15 nA	100 mA	TO-226-3 TO-92-3 Long Body	TO-92	625 mW	250 mV	NPN	420	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548BRL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	600 mV	NPN	200	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 6.69
		5	$ 6.51

Description

General part information

BC548B Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet