BC548B Series

NPN Epitaxial Silicon Transistor

Catalog

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor BC548ABU	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	110	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548BTAR	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	200	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CZL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	250 mV	NPN	420	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548BTFR	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	200	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CTA	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	420	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548_D81Z	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	110	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548CTA	15 nA	100 mA	TO-226-3 TO-92-3	TO-92-3	500 mW	600 mV	NPN	420	300 MHz	30 V	150 °C	Through Hole
ON Semiconductor BC548BZL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	600 mV	NPN	200	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548C	15 nA	100 mA	TO-226-3 TO-92-3 Long Body	TO-92	625 mW	250 mV	NPN	420	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226
ON Semiconductor BC548BRL1G	15 nA	100 mA	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	625 mW	600 mV	NPN	200	300 MHz	30 V		Through Hole	-55 °C	150 °C	TO-226

Catalog

NPN Epitaxial Silicon Transistor

Key Features

• High Voltage VCEO=65V

• Low Noise: BC549,BC550

• Complement to BC556...BC560Switching and Amplifier

Description

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.