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SOT8002-1
Discrete Semiconductor Products

PXN017-30QLJ

Active
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 7.9A 8-PIN MLPAK33 EP T/R

SOT8002-1
Discrete Semiconductor Products

PXN017-30QLJ

Active
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 7.9A 8-PIN MLPAK33 EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN017-30QLJ
Current - Continuous Drain (Id) @ 25°C7.9 A, 20 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.7 nC
Input Capacitance (Ciss) (Max) @ Vds350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)10.9 W, 1.7 W
Rds On (Max) @ Id, Vgs17.4 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.39
25$ 0.36
100$ 0.29
250$ 0.27
500$ 0.23
1000$ 0.18
Digi-Reel® 1$ 0.45
10$ 0.39
25$ 0.36
100$ 0.29
250$ 0.27
500$ 0.23
1000$ 0.18
N/A 3631$ 0.45
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
15000$ 0.14
30000$ 0.13
75000$ 0.13

Description

General part information

PXN017-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.