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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 17.4 mOhm | 30 V | 350 pF | 1.7 W 10.9 W | 2.2 V | 8-PowerVDFN | 7.9 A 20 A | N-Channel | MLPAK33 | 7.7 nC | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 150 °C | -55 °C |