Discrete Semiconductor Products

APT40GP60B2DQ2G

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IGBT PT 600V 100A

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Discrete Semiconductor Products

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IGBT PT 600V 100A

Technical Specifications

Parameters and characteristics for this part

Specification	APT40GP60B2DQ2G

Current - Collector (Ic) (Max) [Max]	100 A
Gate Charge	135 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	543 W
Switching Energy	385 µJ, 350 µJ
Td (on/off) @ 25°C	20 ns, 64 ns
Test Condition	15 V, 5 Ohm, 400 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Input	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Current - Collector Cutoff (Max) [Max]	Mounting Type	Input Capacitance (Cies) @ Vce	IGBT Type	Package / Case	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Test Condition	Td (on/off) @ 25°C
Microchip Technology APT40GP60J	Standard	600 V	Single	250 µA	Chassis Mount	4.61 nF	PT	ISOTOP	2.7 V	ISOTOP®	284 W	86 A
Microchip Technology APT40GP60B2DQ2G		600 V			Through Hole		PT	TO-247-3 Variant	2.7 V		543 W	100 A	350 µJ 385 µJ	-55 °C	150 °C	135 nC	5 Ohm 15 V 40 A 400 V	20 ns 64 ns
Microchip Technology APT40GP60JDQ2	Standard	600 V	Single	500 çA	Chassis Mount	4.61 nF	PT	SOT-227-4 miniBLOC	2.7 V	ISOTOP®	284 W	86 A		-55 °C	150 °C
Microchip Technology APT40GP60BG		600 V			Through Hole		PT	TO-247-3	2.7 V	TO-247 [B]	543 W	100 A	352 µJ 385 µJ	-55 °C	150 °C	135 nC	5 Ohm 15 V 40 A 400 V	20 ns 64 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	40	$ 13.11

General part information

IGBT PT 600 V 100 A 543 W Through Hole

Technical documentation and resources