JAN2N657S
ActiveNPN SILICON MEDIUM-POWER 60V TO 100V, 0.2A
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JAN2N657S
ActiveNPN SILICON MEDIUM-POWER 60V TO 100V, 0.2A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N657S |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 mA |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 336.54 | |
Description
General part information
JAN2N657S-Transistor Series
This specification covers the performance requirements for NPN, silicon, medium power, 2N497, 2N498, 2N656 and 2N657 transistors. One level of product assurance (JAN) is provided for encapsulated devices as specified in MIL-PRF-19500/74.The device package outlines are as follows: TO–205AA (formerly modified TO–5) (without suffix S) or a TO–205AD (formerly modified TO–39) (with suffix S) in accordance with all encapsulated device types.
Documents
Technical documentation and resources
