Discrete Semiconductor Products

G3R450MT17D

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SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

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Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	G3R450MT17D

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	88 W
Rds On (Max) @ Id, Vgs	585 mOhm
Supplier Device Package	TO-247-3
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.7 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power Dissipation (Max)
GeneSiC Semiconductor G3R450MT17J	2.7 V	585 mOhm	15 V	Surface Mount	9 A	1700 V	18 nC	N-Channel	15 V	TO-263-7	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA
GeneSiC Semiconductor G3R450MT17D	2.7 V	585 mOhm	15 V	Through Hole	9 A	1700 V	18 nC	N-Channel	15 V	TO-247-3	175 °C	-55 °C	TO-247-3	88 W

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General part information

N-Channel 1700 V 9A (Tc) 88W (Tc) Through Hole TO-247-3

Technical documentation and resources