Specification	FDMQ8403

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	215 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-WDFN Exposed Pad
Power - Max [Max]	1.9 W
Supplier Device Package	12-MLP
Supplier Device Package [x]	5
Supplier Device Package [y]	4.5
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

FDMQ8403 Series

N-Channel PowerTrench® MOSFET GreenBridge™ Series of High-Efficiency Bridge Rectifiers 100V, 6A, 110mΩ

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Configuration	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology
ON Semiconductor FDMQ8403	Surface Mount	5 nC	3.1 A	215 pF	-55 °C	150 °C	100 V	12-WDFN Exposed Pad	4 N-Channel	5	4.5	12-MLP	4 V	1.9 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.

Technical documentation and resources