Discrete Semiconductor Products
MJE703G
ObsoleteON Semiconductor
4.0 A, 80 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
MJE703G
ObsoleteON Semiconductor
4.0 A, 80 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE703G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 750 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 40 W |
| Supplier Device Package | TO-126 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic [Max] | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Newark | Each | 100 | $ 0.63 | |
Description
General part information
MJE702 Series
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
Documents
Technical documentation and resources