MJE702 Series

4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Catalog

4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Part	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor MJE703G	Through Hole	PNP - Darlington	2.8 V	4 A	TO-126-3 TO-225AA	100 µA	-55 °C	150 °C	40 W	80 V	TO-126	750

Catalog

4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain -hFE= 2000 (Typ) @ IC= 2.0 Adc

• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication

• Choice of Packages -MJE700 and MJE800 series

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.