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Microchip Technology-JANTX2N6351 Darlington BJT Trans Darlington NPN 150V 5A 1000mW 4-Pin TO-33 Box
Discrete Semiconductor Products

JANTX2N6351

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Microchip Technology

TRANS DARLINGTON NPN 150V 5A 1000MW 4-PIN TO-33 BOX

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Microchip Technology-JANTX2N6351 Darlington BJT Trans Darlington NPN 150V 5A 1000mW 4-Pin TO-33 Box
Discrete Semiconductor Products

JANTX2N6351

Active
Microchip Technology

TRANS DARLINGTON NPN 150V 5A 1000MW 4-PIN TO-33 BOX

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6351
Current - Collector (Ic) (Max)5 A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-205AC, TO-33-4 Metal Can
Power - Max [Max]1 W
QualificationMIL-PRF-19500/472
Supplier Device PackageTO-33
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max)150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 75.93

Description

General part information

JANTX2N6351-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6350, 2N6351, 2N6352 and 2N6353 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/472. One level of product assurance (JANHC) is provided for each unencapsulated device type as specified in MIL-PRF-19500/472.

Documents

Technical documentation and resources

No documents available