Discrete Semiconductor Products
STP200N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2 MOHM TYP., 120 A, STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
Discrete Semiconductor Products
STP200N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2 MOHM TYP., 120 A, STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP200N3LL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 53 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 176.5 W |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP200N3LL Series
This device is an N-channel Power MOSFET with very low RDS(on)in all packages.