Discrete Semiconductor Products

SQD35N05-26L-GE3

Obsolete

MOSFET N-CH 55V 30A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 30A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SQD35N05-26L-GE3

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	50 W
Qualification	AEC-Q101
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Grade	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Gate Charge (Max)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Qualification	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	FET Type
Vishay Dale SQD35N05-26L-GE3	Automotive	20 mOhm	-55 °C	175 °C	Surface Mount	TO-252AA	18 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 W	30 A	MOSFET (Metal Oxide)	AEC-Q101	10 V	4.5 V	20 V	2.5 V	55 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.23	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 30A (Tc) 50W (Tc) Surface Mount TO-252AA

Technical documentation and resources