Discrete Semiconductor Products

SQD35N05-26L-GE3

Obsolete

MOSFET N-CH 55V 30A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 30A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SQD35N05-26L-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQD35N05-26L-GE3	1175 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	4.5 V 10 V	Surface Mount	20 V	TO-252AA	2.5 V	N-Channel	MOSFET (Metal Oxide)	18 nC	20 mOhm	30 A	50 W	55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 30A (Tc) 50W (Tc) Surface Mount TO-252AA

Technical documentation and resources