SQD35N Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 55V 30A TO252
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1175 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 175 ░C | 4.5 V 10 V | Surface Mount | 20 V | TO-252AA | 2.5 V | N-Channel | MOSFET (Metal Oxide) | 18 nC | 20 mOhm | 30 A | 50 W | 55 V |