Discrete Semiconductor Products

PSMN5R0-100ES,127

Obsolete

MOSFET N-CH 100V 120A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 120A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN5R0-100ES,127

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	9900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	338 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN5R0-40MSHX	20 V	85 A	Surface Mount	29 nC	LFPAK33	2010 pF	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	10 V	N-Channel	83 W	3.6 V
Freescale Semiconductor - NXP PSMN5R0-40MLHX	20 V	85 A	Surface Mount		LFPAK33	2649 pF	MOSFET (Metal Oxide)	40 V	-55 °C	175 ░C	4.5 V 10 V	N-Channel	83 W		39 nC	2.15 V
Freescale Semiconductor - NXP PSMN5R0-100ES,127	20 V	120 A	Through Hole	170 nC	I2PAK	9900 pF	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	10 V	N-Channel	338 W				I2PAK TO-262-3 Long Leads TO-262AA	5 mOhm
Freescale Semiconductor - NXP PSMN5R0-30YL,115	20 V	91 A	Surface Mount	29 nC	LFPAK56 Power-SO8	1760 pF	MOSFET (Metal Oxide)	30 V	-55 °C	175 ░C	4.5 V 10 V	N-Channel				2.15 V	SC-100 SOT-669	5 mOhm	61 W
Freescale Semiconductor - NXP PSMN5R0-80PS,127	20 V	100 A	Through Hole		TO-220AB	6793 pF	MOSFET (Metal Oxide)	80 V	-55 °C	175 ░C	10 V	N-Channel			101 nC		TO-220-3	4.7 mOhm	270 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 120A (Tc) 338W (Tc) Through Hole I2PAK

Technical documentation and resources