Discrete Semiconductor Products

SI7794DP-T1-GE3

Obsolete

MOSFET N-CH 30V 28.6A/60A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 28.6A/60A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI7794DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	28.6 A
Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	72 nC
Input Capacitance (Ciss) (Max)	2520 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 48 W
Rds On (Max)	3.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package / Case	Package Name	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Technology	Vgs(th) (Max)	FET Feature	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI7794DP-T1-GE3	2520 pF	Surface Mount	30 V	3.4 mOhm	10 V	4.5 V	5 W 48 W	PowerPAK® SO-8	PowerPAK® SO-8	20 V	N-Channel	60 A	28.6 A	MOSFET (Metal Oxide)	2.5 V	Schottky Diode (Body)	72 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 28.6A (Ta), 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources