SI7794 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 28.6A/60A PPAK
| Part | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Schottky Diode (Body) | N-Channel | 72 nC | 2.5 V | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 30 V | -55 °C | 150 °C | 3.4 mOhm | 28.6 A 60 A | Surface Mount | 4.5 V 10 V | 20 V | 5 W 48 W | PowerPAK® SO-8 |