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TO-252AA
Discrete Semiconductor Products

FCD3400N80Z

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2 A, 3.4 Ω, DPAK

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TO-252AA
Discrete Semiconductor Products

FCD3400N80Z

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2 A, 3.4 Ω, DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationFCD3400N80Z
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)32 W
Rds On (Max) @ Id, Vgs3.4 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.50
10$ 1.61
100$ 1.10
500$ 0.89
1000$ 0.82
Digi-Reel® 1$ 2.50
10$ 1.61
100$ 1.10
500$ 0.89
1000$ 0.82
Tape & Reel (TR) 2500$ 0.74
5000$ 0.74
NewarkEach (Supplied on Full Reel) 1$ 1.02
3000$ 0.97
6000$ 0.89
12000$ 0.80
18000$ 0.77
30000$ 0.75
ON SemiconductorN/A 1$ 0.68

Description

General part information

FCD3400N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.