Discrete Semiconductor Products

NGTB75N65FL2WAG

Obsolete

ON Semiconductor

IGBT FIELD STOP 650V 200A TO247

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Discrete Semiconductor Products

NGTB75N65FL2WAG

Obsolete

ON Semiconductor

IGBT FIELD STOP 650V 200A TO247

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB75N65FL2WAG

Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	310 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power - Max [Max]	536 W
Reverse Recovery Time (trr)	90 ns
Supplier Device Package	TO-247-4L
Switching Energy	610 µJ, 1.2 mJ
Td (on/off) @ 25°C	23 ns, 157 ns
Test Condition	75 A, 15 V, 10 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

NGTB75N65FL2WA Series

IGBT, 650 V Field Stop II, 75 A

Part	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Td (on/off) @ 25°C	Mounting Type	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	IGBT Type
ON Semiconductor NGTB75N65FL2WAG	TO-247-4	90 ns	TO-247-4L	2 V	-55 °C	175 ░C	10 Ohm 15 V 75 A 400 V	23 ns 157 ns	Through Hole	200 A	200 A	536 W	1.2 mJ 610 µJ	650 V	310 nC	Field Stop

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB75N65FL2WA Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Documents

Technical documentation and resources