NGTB75N65FL2WA Series

IGBT, 650 V Field Stop II, 75 A

Catalog

IGBT, 650 V Field Stop II, 75 A

Part	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Td (on/off) @ 25°C	Mounting Type	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	IGBT Type
ON Semiconductor NGTB75N65FL2WAG	TO-247-4	90 ns	TO-247-4L	2 V	-55 °C	175 ░C	10 Ohm 15 V 75 A 400 V	23 ns 157 ns	Through Hole	200 A	200 A	536 W	1.2 mJ 610 µJ	650 V	310 nC	Field Stop

Catalog

IGBT, 650 V Field Stop II, 75 A

Key Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Improved Gate Control Lowers Switching Losses

• Separate Emitter Drive Pin

• TO-247-4L for Minimal Eon Losses

• Optimized for High Speed Switching

• These are Pb-Free Devices

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.