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SOT 363
Discrete Semiconductor Products

BC847BS

Obsolete
ON Semiconductor

NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER

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SOT 363
Discrete Semiconductor Products

BC847BS

Obsolete
ON Semiconductor

NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationBC847BS
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]210 mW
Supplier Device PackageSC-88 (SC-70-6)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic650 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BC847CDXV6 Series

The 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.