
Discrete Semiconductor Products
BC847BS
ObsoleteON Semiconductor
NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER
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Discrete Semiconductor Products
BC847BS
ObsoleteON Semiconductor
NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC847BS |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 210 mW |
| Supplier Device Package | SC-88 (SC-70-6) |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BC847CDXV6 Series
The 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
Documents
Technical documentation and resources