
Deep-Dive with AI
Search across all available documentation for this part.

Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC847CDXV6T1H |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 420 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-563 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BC847CDXV6 Series
The 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
Documents
Technical documentation and resources
No documents available