Discrete Semiconductor Products

FERD15S50SB-TR

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RECTIFIERS 50V FIELD-EFFECT RECTIFIER DIODE

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Discrete Semiconductor Products

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RECTIFIERS 50V FIELD-EFFECT RECTIFIER DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	FERD15S50SB-TR

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	650 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Speed	500 ns, 200 mA
Supplier Device Package	DPAK
Technology	FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	490 mV

Part	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Speed	Supplier Device Package	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
STMicroelectronics FERD15S50SB-TR	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	50 V	150 °C	200 mA 500 ns	DPAK	FERD (Field Effect Rectifier Diode)	15 A	650 µA	490 mV

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General part information

This single rectifier is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

Packaged in DPAK, this device is intended to be used in rectification and freewheeling operations in power supplies.