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2N6306
Discrete Semiconductor Products

JANTX2N6383

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Microchip Technology

DARLINGTON NPN SILICON POWER 40V TO 80V, 10A

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2N6306
Discrete Semiconductor Products

JANTX2N6383

Active
Microchip Technology

DARLINGTON NPN SILICON POWER 40V TO 80V, 10A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6383
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]6 W
QualificationMIL-PRF-19500/523
Supplier Device PackageTO-204AA (TO-3)
Vce Saturation (Max) @ Ib, Ic3 V
Vce Saturation (Max) @ Ib, Ic [custom]10 A
Vce Saturation (Max) @ Ib, Ic [custom]100 mA
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 60.16
Microchip DirectN/A 1$ 64.79

Description

General part information

JANTXV2N6383-Darlington Series

This specification covers the performance requirements for NPN silicon, power Darlington, 2N6383, 2N6384 and 2N6385 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/523. The device package outlines are as follows: TO-204AA (formerly TO-3) for all encapsulated device types.

Documents

Technical documentation and resources